PART |
Description |
Maker |
LH28F160SGED-L10 |
16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory
|
Sharp Corporation
|
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components) PC133/100 SDRAM 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512 MB的无缓冲内存的SODIMM 64 Mword4位,133/100 MHz内存总线银模块(162米部分)PC133/100 SDRAM内存 x64 SDRAM Module
|
Elpida Memory, Inc.
|
HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
HB52E649E12-A6B HB52E649E12-B6B |
512 MB Registered SDRAM DIMM 64-Mword 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
|
Elpida Memory
|
R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit) R1LP0408C-I Series Datasheet 78K/AUG.01.03 Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit) Memory>Low Power SRAM
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor] Renesas
|
LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位(512 KB的16)SmartVoltage闪存 RES CURRENT SENSE .025 OHM 1W 1% 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
|
http:// Sharp, Corp. Sharp Corporation Sharp Electrionic Compo...
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GM72V161621ET GM72V161621 GM72V161621ELT |
524,288 word x 16 Bit x 2 Bank - SYNCHRONOUS DYNAMIC RAM(SDRAM) 524288 word x 16 Bit x 2 Bank SDRAM
|
LG Semiconductor List of Unclassifed Manufacturers ETC
|
HM5257165B HM5257165BTD-A6 HM5257165B-A6 HM5257165 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30 16 M EDO DRAM(2-Mword*8-bit) 2K Refresh Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:18-32 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM CABLE ASSEMBLY 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
|
HM5216805 HM5216805LTT-10H HM5216805TT-10H HM52168 |
16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword ? 8-bit ? 2-bank/2-Mword ? 4-bit ? 2-bank
|
Hitachi Semiconductor
|
AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位)的CMOS存储 Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32 8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32 8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位)的CMOS存储 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32 4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32 MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- |
256MB (32Mx72) PC1600 1-bank 512MB (64Mx72) PC1600 1-bank 512MB (64Mx72) PC2100 1-bank 1GB (128Mx72) PC1600 2-bank 1GB (128Mx72) PC2100 2-bank GB的(128Mx72)PC2100 2银行 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Infineon Technologies AG
|
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512M; 100MHz LVTTL interface SDRAM 512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|